2011 |
| November |
Released LED Module LMH2 |
| October |
Released XLamp XT-E and XM-L High-Voltage LEDs |
| September |
Launched Cree Services with TEMPO testing for LED-based fixtures |
| August |
Announced the acquisition of Ruud Lighting, Inc. |
| Announced commercial availability of XLamp® XT-E Royal Blue LEDs |
| Announced a prototype LED bulb that exceeds DOE's 21st Century Lamp L Prize requirements |
| June |
Announced a new family of seven 1200-V Z-Rec™ silicon carbide Schottky diodes |
| Announced the visit of President Barack Obama |
| Demonstrated a GaN HEMT MMIC high-power amplifier (HPA) for satellite communication applications |
| May |
Announced a 1200-V SiC MOSFET |
| Announced LED Module LMR4 |
| Demonstrated a 231-lumens-per-watt, white, power LED |
| April |
Announced the release of Screen Master® CLX6A-FKB LEDs |
| Announced the availability of the CR family of architectural troffers |
| Announced LED Module LMH6 |
| Announced the release of XLamp XM-L LEDs |
| March |
Announced the commercial availability of XLamp XM-L LEDs |
| February |
Announced the commercial availability of XLamp ML-B LEDs |
| Announced the industry's first commercial 1200-V surface-mount SiC Schottky diode |
| Announced XLamp MT-G LEDs |
| January |
Demonstrated an LED-based A-lamp that can meet ENERGY STAR® performance requirements for a 60-watt standard LED replacement bulb |
| Announced LED Module LMR4 |
| Introduced the industry's first fully qualified commercial silicon carbide power MOSFET |
2010 |
| December |
Announced commercial availability of XLamp® XP-E High Efficiency White (HEW) LEDs |
| Announced new line of Z-Rec™ 650V Junction Barrier Schottky diodes |
| Released XLamp CXA20 LED arrays |
| November |
Announced commercial availability of new XLamp XM-L LEDs |
| October |
Announced commercial availability of new XLamp MX-6S and MX-3S LEDs |
| September |
Announced a new 150-mm LED wafer production facility in Research Triangle Park |
| Announced commercial availability of XLamp ML-E LEDs |
| August |
Announced the development of high-quality 150-mm SiC substrates |
| Announced XLamp MX-3 LEDs |
| Announced the availability of the company’s six-inch LED downlights through The Home Depot |
| Announced the beginning of construction on the world’s first all-LED-lighting Habitat for Humanity house |
| Announced the extension of EasyWhite Technology to its LMR4 LED modules |
| July |
Announced the release of XLamp MP-L and MC-E EasyWhite LED bins based on a single two-step MacAdams ellipse |
| Announced a comprehensive, worldwide patent cross-license agreement with Philips |
| May |
Announced the development of five new GaN HEMT MMIC amplifiers |
| Announced a three-year, $1.5 million pledge to provide high-efficiency Cree LED downlights for the kitchens in all new Habitat for Humanity homes built in the United States |
| Announced the LR6-DR1000 downlight |
| Announced general availability of the CR6 LED downlight |
| Announced the LR24HE 100 lumens-per-watt troffer fixture |
| Announced the LBR-30 retrofit lamp |
| Announced the extension of warranties for LED lighting fixtures to five years |
| April |
Announced the Z-Rec™ 1700-V Junction Barrier Schottky Diode Series of products |
| Announced that new XLamp XM LEDs achieve 160 lumens per watt at 350 mA |
| Announced new product line of LED modules employing Cree TrueWhite® Technology |
| March |
Hosted Vice President Joe Biden and Energy Secretary Steven Chu for a company tour and press conference regarding job creation |
| Released XLamp XP-G LEDs in warm- and neutral-white color temperatures |
| February |
Announced an R&D result of 208-lumens-per-watt white power LED
|
| Released the XLamp MP-L LED with EasyWhite® Technology |
| January |
Signed a distribution agreement with Arrow Electronics, Inc. for SiC power products |
| Announced the demonstration of the Cree CR6 LED downlight |
2009 |
| December |
Acquired semi-insulating silicon-carbide and power-device patent portfolio from Daimler AG |
| Announced R&D results of 186 lumens per watt for a white power LED |
| November |
Announced an agreement to purchase a 592,000-square-foot facility in Huizhou, Guangdong Province, China, for chip production |
| LRP-38 LED light bulbs selected for initial 650-store deployment at Walmart |
| October |
Announced commercial availability of the XLamp® MX-6 LED |
| Announced the expansion of its North Carolina manufacturing capacity |
| Announced the expansion of its North Carolina manufacturing capacity |
| September |
Announced the commercial availability of the XLamp® XP-G LED |
| Announced that the underwriters of its recent public offering of common stock have fully exercised their overallotment option, resulting in the issuance of an additional 1,650,000 shares |
| Announced public offering of 11,000,000 shares of common stock |
| July |
Released line of advanced Z-Rec™ silicon-carbide power diodes |
| June |
Introduced IPx5-rated tri-color LEDs for full-color displays |
| Demonstrated 120-watt and 180-watt high-efficiency GaN HEMT amplifiers |
| Announced the first public demonstration of a record 50 percent efficiency Doherty transistor amplifier with digital pre-distortion |
| Signed a definitive agreement with RFHIC Corporation (Suwon, Korea) to supply GaN-on-SiC transistors to RFHIC for their GaN HEMT amplifier product families |
| May |
Demonstrated a prototype version of the LR6 LED recessed downlight that consumes just 6.5 W of electricity |
| April |
Demonstrated 132 lumens-per-watt XLamp XP-G LED |
| Introduced the LRP-38 LED lamp |
| Announces industry’s smallest ANSI-compliant warm/neutral LED bins |
| Awarded ENERGY STAR® qualifications for LR6, LR5 and LR4 LED downlights |
| March |
Launched the Product Characterization Tool, an interactive LED design tool that simplifies the task of translating nominal LED performance to real-world conditions |
| February |
Demonstrated a dual-switch, 1200-volt, 100-amp power module featuring all-SiC semiconductors |
| January |
Announced the sample release of two 120-W, highly efficient GaN HEMT microwave transistors for telecommunication applications such as W-CDMA, LTE and WiMAX |
| Entered into an exclusive patent license agreement with Mitsubishi Chemical Corporation (MCC) on the sale of GaN substrates |
| Announced planned installation of more than 4,200 LR24 recessed LED luminaires in Wedge 5 of the Pentagon |
2008 |
| December |
Announced the high-volume availability of lighting-class XLamp® XP-E LEDs with output up to 122 lumens |
| Announced the sample release of a highly efficient 120-watt GaN HEMT microwave transistor for general-purpose military and industrial applications |
| Announced volume availability of LR24 recessed LED luminaire |
| November |
Demonstrated 161 lumens per watt from a high-power LED |
| October |
Announced the release of its new-generation high-brightness 4-mm and 5-mm oval LEDS in blue, green and red |
| Announced strategic agreement with Zumtobel for LED downlights in Europe |
| September |
Announced commercial availability of XLamp MC-E LED |
| August |
Announced XLamp XP-E and XP-C LEDs |
| July |
Opened engineering center in Shenzhen, China |
| June |
Announced first commercially available GaN RF MMIC products |
| Introduced industry’s first GaN HEMT products for 5-GHz WiMAX applications |
| May |
Announced patent agreement With Toyoda Gosei |
| Announced volume shipments of LR4 downlights |
| April |
Announced global availability of LR6 downlights |
| March |
Acquired LED Lighting Fixtures, Inc. |
2007 |
| November |
Launched Cree Solution Provider program |
| Announced corporate conversion to LED lighting |
| October |
Announced commercial release of 100-mm,
Zero Micropipe SiC substrates |
| Introduced 8-A, 600-V, Zero Recovery SiC rectifier
for computer servers |
| September |
Achieved 1,000 lumens from a single LED |
| June |
Announced commercial availability of XLamp LEDs
with minimum luminous flux of 100 lumens at 350 mA |
| Introduced blue XLamp XR-E LEDs |
| Introduced GaN HEMT for broadband applications |
| May |
Demonstrated 100-mm, Zero Micropipe SiC substrates |
| April |
Acquired COTCO Luminant Device Ltd. of Hong Kong |
| March |
Expanded the XLamp XR-E and XR-C series of LEDs
with warm white color temperatures |
| February |
Introduced the EZBright700 LED power chip |
| Introduced the XLamp XR-C series of LEDs |
2006 |
| October |
Delivered the XLamp XR-E Series LED, the
first 160-lumen white power LED |
| August |
Introduced EZBright1000™ LED power chip for general
lighting applications |
| July |
Introduced 2-amp rectifier for PC
power supplies |
| June |
Demonstrated 400 watts of RF power for GaN S-Band
transistors |
| Demonstrated a 131-lumens/watt white LED |
| May |
Introduced GaN HEMT for WiMAX power transistors |
| April |
Introduced the EZR™ LED chip for the EZBright
family |
| March |
Introduced the EZBright™ family of LED chips |
| February |
Introduced the XR series of XLamp LEDs |
| January |
Demonstrated a 100-kVA SiC Three Phase Inverter |
2005 |
| September |
Introduced 100mm (4”) SiC substrate and
epitaxy material |
| Achieved 70 lumens per watt with XLamp 7090 LED
in R&D |
| July |
Introduced 3-watt XLamp |
| June |
Introduced SiC MESFETS for WiMAX power amplifiers |
| Introduced RazerThin 230 LED product |
| Introduced MegaBright 290 Gen 2 LED Product |
| May |
Introduced Colorwave™ backlight solution
for LCD TVs & monitors |
| Introduced brighter blue and green XB900™ power
LEDs for LCD BL |
| February |
Achieved 56 lumens from one-watt white XLamp
LED in R&D |
| Achieved standard LED efficiency of 100 lumens/watt
in R&D |
2004 |
| November |
Announced XLamp 7090 |
| July |
Launched XLamp® LED product line |
| May |
Launched brighter XThin LED product |
| January |
Expanded XThin® LED product family |
2003 |
| July |
Introduced RazerThin® LED products |
| June |
Demonstrated 100 mm semi-insulating SiC substrates |
| Introduced LDMOS products for avionics and radar
markets |
| Introduced MegaBright Plus™ and XBright
Plus™ blue LEDs |
| March |
Introduced second-generation SiC MESFET RF transistor |
| February |
Released 1200 V SiC Schottky rectifier |
2002 |
| August |
Introduced 20-A, 600-V, Zero Recovery® SiC
rectifier |
| February |
Introduced XBright power chip |
| January |
Introduced green 525 MegaBright LED |
| Introduced 10-A, 600-V, SiC Schottky rectifier |
2001 |
| December |
Demonstrated 108 W at 2 GHz from GaN RF devices |
| November |
Announced blue laser lifetimes in excess of 1,000
hours |
| Introduced green 505 MegaBright LED |
| October |
Introduced XBright® blue LED |
| July |
Introduced 12 mW UV LEDs |
| Introduced first SiC Schottky diodes |
| Introduced 4H and 6H 3-inch SiC wafers |
| May |
Introduced MegaBright® blue LED |
| April |
Introduced 3-inch 4H SiC wafers |
| February |
Demonstrated 32-percent quantum efficiency with
near-UV LED |
2000 |
| October |
Introduced UltraBright® blue and green LEDs |
| August |
Announced high-power 10 GHz GaN HEMT |
| June |
Introduced lower-current InGaN blue and green
LEDs |
| May |
Demonstrated 12.3 kV high-efficiency SiC power
rectifier |
1990s |
| October 1999 |
Demonstrated 4-inch SiC wafer |
| June 1999 |
Introduced 48 V, 10 W SiC MESFET RF device |
| May 1999 |
Introduced InGaN blue and green LEDs |
| March 1998 |
Demonstrated high-power microwave SiC MESFET |
| September 1997 |
Introduced 2-inch SiC wafer |
| June 1997 |
Demonstrated pulsed GaN blue laser at room temperature |
| May 1997 |
Announced reduced micropipe 4 HN SiC wafers |
| June 1995 |
Introduced Nitride-based blue LED |
| October 1993 |
Developed SiC microwave transistors operating
up to 12.9 GHz |
| September 1993 |
Introduced brighter version blue LED |
| August 1993 |
Introduced 4H SiC wafer |
| February 1993 |
Initial public offering |
| October 1991 |
Released world’s first commercial SiC wafers |
1980s |
| August 1989 |
Introduced first blue LED |
| July 1987 |
Cree founded |
