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  S-Band
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SiC & GaN MMIC Foundry Services

Silicon Carbide (SiC) MESFETs and GaN-based HEMTs

For additional information, contact Cree at WirelessSales@cree.com.

Cree’s SiC MESFET and GaN HEMT MMIC processes are available for MMIC development using standard full-wafer (SFW) service or a shared multi-project (SMP) “pizza mask” fabrication service. Customers can design into the foundry using ADS or MWO design kits or have Cree perform the design service. Both processes feature

• High power density (4-6 watts/mm) transistors
• Slot vias
• High reliability up to 175-225ºC operating channel temperatures
• Scalable unit cells (1 to 8 mm/Cell)

The value of such MMICs is more power bandwidth and higher efficiency within a smaller footprint compared to other MMIC technologies.

Read the Foundry Services brochure.

• 12/12/2011
  Cree Licenses Key Doherty Amplifier Patents to RFHIC
• 6/2/2011
  Cree GaN HEMT Transistors and MMIC Deliver Industry-Leading Power and Efficiency for S-Band Radar Applications
• 6/2/2011
  Cree Demonstrates Industry’s First C-Band GaN HEMT MMIC High-Power Amplifier for Satellite Communications
• 5/20/2010
  Cree to Demonstrate New GaN HEMT Power Amplifier & Switch Products
• 5/20/2010
  Cree’s GaN HEMT MMIC Power Amplifiers Expand Frequency Range Through X-Band, Includes First Commercially Available LNA