SiC & GaN MMIC Foundry Services
Silicon Carbide (SiC) MESFETs and GaN-based HEMTs
For additional information, contact Cree at WirelessSales@cree.com.
Cree’s SiC MESFET and GaN HEMT MMIC processes are available for MMIC development using standard full-wafer (SFW) service or a shared multi-project (SMP) “pizza mask” fabrication service. Customers can design into the foundry using ADS or MWO design kits or have Cree perform the design service. Both processes feature
- High power density (4-6 watts/mm) transistors
- Slot vias
- High reliability up to 175-225ºC operating channel temperatures
- Scalable unit cells (1 to 8 mm/Cell)
The value of such MMICs is more power bandwidth and higher efficiency within a smaller footprint compared to other MMIC technologies.
Read the Foundry Services brochure.