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Z-FET™ CMF20120D — Industry’s First SiC MOSFET
Attain record efficiencies with significant reliability improvement over competing Si devices.
 1200 V 80 mΩ
- High-speed switching
- Low capacitances
- Only 20% increase in RDS(ON)
over operating temperature range
- Easy to parallel
- Lowest switching loss in its class.
- Enables significantly higher switching frequencies with world-class efficiency.
- Reduced magnetics and filter size with significantly reduced cooling requirements.
- RoHS-, REACH- and halogen-free-compliant
Contact your Cree distributor for more information.
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